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The exceptional breakdown field and ultra-wide bandgap of beta-gallium oxide (β-Ga2O3) position it as a promising material for next-generation high-power electronics. This thesis systematically investigates the growth behaviour, structural quality, and surface morphology of β-Ga2O3 thin films deposited via Pulsed Laser Deposition (PLD) on both c-plane sapphire (Al2O3) and MOCVD-grown GaN-on-sapphi
