Low-Frequency Noise in TFETs
Nanowire tunnel field-effect transistors (TFETs) were investigated by carrying out noise measurements and low-temperature DC measurements. The TFET tunnelling junction was realised by a GaSb/InAs heterojunction resulting in a broken band gap. TFET noise currents were measured at frequencies between 10 Hz and 1 kHz. The results imply that noise in TFETs at the current state of development is domina