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Civil society organizations have distinctive roles to play in everysociety. They collectively contribute to the very communal fabric thatenables a dynamic social contract, and provide the space and the opportunityfor matters not easily handled in the other spheres of society.In those roles civil society is also a crucial part in the resilience of anysociety and a key force in its capacity to cope

The existing information supports the use of this material as described in this safety assessment. Ethyl 3-methylthiopropionate was evaluated for genotoxicity, repeated dose toxicity, reproductive toxicity, local respiratory toxicity, phototoxicity/photoallergenicity, skin sensitization, and environmental safety. Data from read-across analog methyl 3-methylthiopropionate (CAS # 13532-18-8) show th

The existing information supports the use of this material as described in this safety assessment. Phenylethyl anthranilate was evaluated for genotoxicity, repeated dose toxicity, developmental and reproductive toxicity, local respiratory toxicity, phototoxicity/photoallergenicity, skin sensitization, and environmental safety. Data from phenylethyl anthranilate and the read-across analog cinnamyl

The existing information supports the use of this material as described in this safety assessment. 4-Methylpentanoic acid was evaluated for genotoxicity, repeated dose toxicity, reproductive toxicity, local respiratory toxicity, phototoxicity/photoallergenicity, skin sensitization, and environmental safety. Data from read-across analog 2-ethylbutyric acid (CAS # 88-09-5) show that 4-methylpentanoi

Rare cancers together constitute one fourth of cancers. As some rare cancers are caused by occupational exposures, a systematic search for further associations might contribute to future prevention. We undertook a European, multi-center case–control study of occupational risks for cancers of small intestine, bone sarcoma, uveal melanoma, mycosis fungoides, thymus, male biliary tract and breast. In

Semiconductor nanowires in wrapped, gate-all-around transistor geometry are highly favorable for future electronics. The advanced nanodevice processing results in strain due to the deposited dielectric and metal layers surrounding the nanowires, significantly affecting their performance. Therefore, non-destructive nanoscale characterization of complete devices is of utmost importance due to the sm

Understanding formation and distribution of defects in GaN substrates and device layers is needed to improve device performance in rf and power electronics. Here we utilize conductive atomic force microscopy (c-AFM) for studying defect-related leakage paths in an unintentionally doped GaN film formed by nanowire reformation. A nanoscopic Schottky contact is formed between the c-AFM probe and the G