No title
In this study, a report is prepared on significantly low specific contact resistivity of alloyed and non-alloyed ohmic contacts fabricated on an as-grown n+-GaN layer and measured with the transfer length method. A low ρc = 8 × 10−8 Ω cm2 is extracted for the alloyed Ti/Al/Ni/Au, and ρc = 4 × 10−7 Ω cm2 for the unannealed Ti/Pd/Au. To achieve these, a highly doped n+-GaN layer with ND = 1.5 × 1019
