No title
We realize strongly confined quantum dots (QDs) in InAs nanowires (NWs) by combining epitaxial crystal-phase control with chemical wet etching. A strong axial confinement is first introduced by growing closely spaced wurtzite (WZ) tunnel barriers in NWs to enclose a zinc blende (ZB) QD. The NW cross-section is then reduced by isotropic etching to obtain very small QDs, with a maximum observed char
