Parametric Study on the Growth of Type-II InSb Quantum Dots on InAs Substrates by Molecular Beam Epitaxy
The formation of InSb quantum dots (QDs) embedded in an InAs matrix grown by molecular beam epitaxy (MBE) was studied parametrically. In particular, the effect of the sequence of the change of As2 dimers and Sb2 on the distribution of As and Sb at the InSb-QDs/InAs interface was investigated by cross-sectional transmission electron microscopy (TEM). It was shown that additional As2 above the InSb
