Three-Dimensional Imaging of Beam-Induced Biasing of InP/GaInP Tunnel Diodes
Electron holographic tomography was used to obtain three-dimensional reconstructions of the morphology and electrostatic potential gradient of axial GaInP/InP nanowire tunnel diodes. Crystal growth was carried out in two opposite directions: GaInP–Zn/InP–S and InP–Sn/GaInP–Zn, using Zn as the p-type dopant in the GaInP but with changes to the n-type dopant (S or Sn) in the InP. Secondary electron