Gate-defined quantum devices realized on an InGaAs/InP heterostructure by incorporating a high-kappa dielectric material
Gate-defined quantum devices in an InGaAs/InP heterostructure are achieved by introducing a HfO2 layer as the gate dielectric. The high-kappa layer is grown by atomic layer deposition and the fabrication process is described in detail. Electrical measurements at low temperature reveal the Coulomb blockade effect. Magnetotransport characterization is also carried out for the devices made from this