Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
Ferroelectric HfxZr1–xO2 (HZO) is typically achieved by crystallization of an amorphous thin film via rapid thermal processing (RTP) at time scales of seconds to minutes. For integration on III–V semiconductors, this approach can severely degrade the sensitive HZO/III–V interface. To evaluate whether a reduced thermal budget can improve the interface quality, millisecond duration thermal anneals a