Ambipolar doping in quasifree epitaxial graphene on SiC(0001) controlled by Ge intercalation
The electronic structure of decoupled graphene on SiC(0001) can be tailored by introducing atomically thin layers of germanium at the interface. The electronically inactive (6 root 3 x 6 root 3)R30 degrees reconstructed buffer layer on SiC(0001) is converted into quasi-free-standing monolayer graphene after Ge intercalation and shows the characteristic graphene pi bands as displayed by angle-resol
