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III-V co-integration is less mature compared to Si/Ge CMOS due to their inferior pMOS device performance. This letter adopts a novel quaternary InGaAsSb channel material in a core-shell vertical nanowire structure to overcome the limitations. A gate-last process achieves self-alignment of the drain and gate contacts. The improved electrostatics with short gate length ${L}_{\text {g}}$ = 60 nm resu
