Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
Fabrication of next generation transistors calls for new technological requirements, such as reduced size and increased density of structures. Development of cost‐effective processing techniques to fabricate small‐pitch vertical III–V nanowires over large areas will be an important step toward realizing dense gate all‐around transistors, having high electron mobility, and low power consumption. It