Study of influence of domain structure on observed magnetoresistance anomalies in GaMnAs
Magneto-transport properties of a Ga0.93Mn0.07As ferromagnetic semiconductor film with strong epitaxial strain (Ga0.7In0.3As buffer) have been studied. The observed magnetoresistance showed peculiar peaks at the magnetic fields corresponding to magnetization switching probed by Hall voltage. Computer simulations showed that these anomalies could originate from the formation of complex, island-like
