High aspect ratio silicon structures by displacement Talbot lithography and Bosch etching
Despite the fact that the resolution of conventional contact/proximity lithography can reach feature sizes down to ∼0.5-0.6 micrometers, the accurate control of the linewidth and uniformity becomes already very challenging for gratings with periods in the range of 1-2 μm. This is particularly relevant for the exposure of large areas and wafers thinner than 300 μm. If the wafer or mask surface is n
